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Shenzhen Fuchao Technology
| Model： | AS2M040120P |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Anbon Semiconductor |
| Description： | N-CHANNEL SILIC |
| Encapsulation： | - |
| Package： | Bulk |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$20.6900
$20.6900
10
$18.3900
$183.9000
100
$16.0800
$1,608.0000
500
$13.7200
$6,860.0000
| TYPE | DESCRIPTION |
| Mfr | Anbon Semiconductor |
| Series | - |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2946 pF @ 1000 V |
