CGD65A130S2-T13 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

Product Details

Model：	CGD65A130S2-T13
Product Category：	Single FETs, MOSFETs
Manufacturer：	Cambridge GaN Devices
Description：	650V GAN HEMT,
Encapsulation：	-
Package：	Tape & Reel (TR)
RoHS Status：	1
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Price: $3.3200

Enter Quantity

Quantity

Price

Total Price

$6.2500

$5.3600

$53.6000

100

$4.4600

$446.0000

500

$3.9400

$1,970.0000

1000

$3.5500

$3,550.0000

3500

$3.3200

$11,620.0000

17634828

Model：

17634828

Product Category：

Single FETs, MOSFETs

Manufacturer：

Cambridge GaN Devices

Description：

650V GAN HEMT,

Encapsulation：

Package：

Tape & Reel (TR)

lang_roHSStatusStatus：

Product parameters

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	16-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Supplier Device Package	16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	12V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 12 V