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Shenzhen Fuchao Technology
| Model： | CGD65B200S2-T13 |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Cambridge GaN Devices |
| Description： | 650V GAN HEMT, |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$4.5500
$4.5500
10
$3.8200
$38.2000
100
$3.0900
$309.0000
500
$2.7500
$1,375.0000
1000
$2.3500
$2,350.0000
2000
$2.2100
$4,420.0000
5000
$2.1300
$10,650.0000
| TYPE | DESCRIPTION |
| Mfr | Cambridge GaN Devices |
| Series | ICeGaN™ |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
