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Shenzhen Fuchao Technology
| Model： | FBG30N04CC |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | EPC Space |
| Description： | GAN FET HEMT 30 |
| Encapsulation： | - |
| Package： | Bulk |
| RoHS Status： | |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$318.0500
$318.0500
10
$297.8900
$2,978.9000
| TYPE | DESCRIPTION |
| Mfr | EPC Space |
| Series | - |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 404mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.8V @ 600µA |
| Supplier Device Package | 4-SMD |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 150 V |
