| Model: | G3R40MT12D | 
|---|---|
| Product Category: | Single FETs, MOSFETs | 
| Manufacturer: | GeneSiC Semiconductor | 
| Description: | SIC MOSFET N-CH | 
| Encapsulation: | - | 
| Package: | Tube | 
| RoHS Status: | 1 | 
| 
									
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Quantity
Price
Total Price
1
$17.4200
$17.4200
10
$15.9000
$159.0000
25
$15.3300
$383.2500
100
$14.5200
$1,452.0000
250
$14.0000
$3,500.0000
500
$13.6200
$6,810.0000
| TYPE | DESCRIPTION | 
| Mfr | GeneSiC Semiconductor | 
| Series | G3R™ | 
| Package | Tube | 
| Product Status | ACTIVE | 
| Package / Case | TO-247-3 | 
| Mounting Type | Through Hole | 
| Operating Temperature | -55°C ~ 175°C (TJ) | 
| Technology | SiCFET (Silicon Carbide) | 
| FET Type | N-Channel | 
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) | 
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V | 
| Power Dissipation (Max) | 333W (Tc) | 
| Vgs(th) (Max) @ Id | 2.69V @ 10mA | 
| Supplier Device Package | TO-247-3 | 
| Drive Voltage (Max Rds On, Min Rds On) | 15V | 
| Vgs (Max) | ±15V | 
| Drain to Source Voltage (Vdss) | 1200 V | 
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V | 
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V | 
        
                