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Shenzhen Fuchao Technology
| Model： | IQD020N10NM5ATMA1 |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | IR (Infineon Technologies) |
| Description： | TRENCH >=100V |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$4.6500
$4.6500
10
$3.9000
$39.0000
100
$3.1600
$316.0000
500
$2.8100
$1,405.0000
1000
$2.4000
$2,400.0000
2000
$2.2600
$4,520.0000
5000
$2.1700
$10,850.0000
| TYPE | DESCRIPTION |
| Mfr | IR (Infineon Technologies) |
| Series | OptiMOS™ 5 |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 276A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.05mOhm @ 50A, 10V |
| Power Dissipation (Max) | 3W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 159µA |
| Supplier Device Package | PG-TSON-8-9 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 50 V |
