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Shenzhen Fuchao Technology
| Model： | IRFD210 |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Vishay / Siliconix |
| Description： | MOSFET N-CH 200 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | |
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|
| TYPE | DESCRIPTION |
| Mfr | Vishay / Siliconix |
| Series | - |
| Package | Tube |
| Product Status | OBSOLETE |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 360mA, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 4-HVMDIP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
