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Shenzhen Fuchao Technology
| Model： | NVMFS4C306NT1G |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Sanyo Semiconductor/onsemi |
| Description： | TRENCH 30V NCH |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$1.6000
$1.6000
10
$1.3300
$13.3000
100
$1.0500
$105.0000
500
$0.8900
$445.0000
1500
$0.7600
$1,140.0000
3000
$0.7200
$2,160.0000
7500
$0.6900
$5,175.0000
10500
$0.6700
$7,035.0000
| TYPE | DESCRIPTION |
| Mfr | Sanyo Semiconductor/onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.6A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| Power Dissipation (Max) | 3W (Ta), 36.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1683 pF @ 15 V |
| Qualification | AEC-Q101 |
