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Shenzhen Fuchao Technology
| Model： | TPD3215M |
|---|---|
| Product Category： | FET, MOSFET Arrays |
| Manufacturer： | Transphorm |
| Description： | GANFET 2N-CH 60 |
| Encapsulation： | - |
| Package： | Bulk |
| RoHS Status： | |
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|
| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Bulk |
| Product Status | OBSOLETE |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | 470W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| Supplier Device Package | Module |
