Language:en 
- zh-cn
- en
Shenzhen Fuchao Technology
| Model： | UF3C120080K4S |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | UnitedSiC (Qorvo) |
| Description： | SICFET N-CH 120 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$14.6300
$14.6300
30
$11.8500
$355.5000
120
$11.1500
$1,338.0000
510
$10.1100
$5,156.1000
1020
$9.2700
$9,455.4000
| TYPE | DESCRIPTION |
| Mfr | UnitedSiC (Qorvo) |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| Power Dissipation (Max) | 254.2W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
