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Shenzhen Fuchao Technology
| Model： | XP65AN1K2IT |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | YAGEO XSEMI |
| Description： | MOSFET N-CH 650 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$2.8500
$2.8500
50
$2.2600
$113.0000
100
$1.9400
$194.0000
500
$1.7200
$860.0000
1000
$1.4800
$1,480.0000
2000
$1.3900
$2,780.0000
5000
$1.3300
$6,650.0000
| TYPE | DESCRIPTION |
| Mfr | YAGEO XSEMI |
| Series | XP65AN1K2 |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3.5A, 10V |
| Power Dissipation (Max) | 1.92W (Ta), 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220CFM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 44.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2048 pF @ 100 V |
