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Shenzhen Fuchao Technology
| Model： | 2SJ529L06-E |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Renesas |
| Description： | 2SJ529L06 - P-C |
| Encapsulation： | - |
| Package： | Bulk |
| RoHS Status： | |
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Obtain quotation information
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Quantity
Price
Total Price
295
$1.0200
$300.9000
| TYPE | DESCRIPTION |
| Mfr | Renesas |
| Series | - |
| Package | Bulk |
| Product Status | OBSOLETE |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 5A, 10V |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK(L)-(2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 10 V |
