Language:en
  • zh-cn
  • en

Shenzhen Fuchao Technology

Product Details
  • image of Single FETs, MOSFETs>CGD65A130S2-T13
  • image of Single FETs, MOSFETs>CGD65A130S2-T13
Model CGD65A130S2-T13
Product Category Single FETs, MOSFETs
Manufacturer Cambridge GaN Devices
Description 650V GAN HEMT,
Encapsulation -
Package Tape & Reel (TR)
RoHS Status 1
Obtain quotation information
Price: $3.3200
Enter Quantity

Quantity

Price

Total Price

1

$6.2500

$6.2500

10

$5.3600

$53.6000

100

$4.4600

$446.0000

500

$3.9400

$1,970.0000

1000

$3.5500

$3,550.0000

3500

$3.3200

$11,620.0000

image of Single FETs, MOSFETs>17634828
17634828
Model
17634828
Product Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Description
650V GAN HEMT,
Encapsulation
-
Package
Tape & Reel (TR)
lang_roHSStatusStatus
1
Product parameters
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs182mOhm @ 900mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 4.2mA
Supplier Device Package16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 12 V
captcha

Service hours:9:00-18:00from Monday to Saturday
Please select online customer service:
+86-13723477211

Service hours:9:00-18:00from Monday to Saturday
Please select online customer service:
点击这里给我发消息
0