Model: | CGD65A130S2-T13 |
---|---|
Product Category: | Single FETs, MOSFETs |
Manufacturer: | Cambridge GaN Devices |
Description: | 650V GAN HEMT, |
Encapsulation: | - |
Package: | Tape & Reel (TR) |
RoHS Status: | 1 |
Obtain quotation information
|
Quantity
Price
Total Price
1
$6.2500
$6.2500
10
$5.3600
$53.6000
100
$4.4600
$446.0000
500
$3.9400
$1,970.0000
1000
$3.5500
$3,550.0000
3500
$3.3200
$11,620.0000
TYPE | DESCRIPTION |
Mfr | Cambridge GaN Devices |
Series | ICeGaN™ |
Package | Tape & Reel (TR) |
Product Status | ACTIVE |
Package / Case | 16-PowerVDFN |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Technology | GaNFET (Gallium Nitride) |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
FET Feature | Current Sensing |
Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
Supplier Device Package | 16-DFN (8x8) |
Drive Voltage (Max Rds On, Min Rds On) | 12V |
Vgs (Max) | +20V, -1V |
Drain to Source Voltage (Vdss) | 650 V |
Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |