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Shenzhen Fuchao Technology
| Model： | ICE19N60L |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | IceMOS Technology |
| Description： | Superjunction M |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | |
|
Obtain quotation information
|
Quantity
Price
Total Price
3000
$2.4800
$7,440.0000
9000
$2.3200
$20,880.0000
15000
$2.1200
$31,800.0000
21000
$1.9400
$40,740.0000
| TYPE | DESCRIPTION |
| Mfr | IceMOS Technology |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 9.5A, 10V |
| Power Dissipation (Max) | 236W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2064 pF @ 25 V |
