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Shenzhen Fuchao Technology
| Model： | IV1D12010O2 |
|---|---|
| Product Category： | Single Diodes |
| Manufacturer： | Inventchip Technology |
| Description： | DIODE SIL CARB |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$10.8200
$10.8200
10
$9.2700
$92.7000
100
$7.7300
$773.0000
500
$6.8200
$3,410.0000
1000
$6.1400
$6,140.0000
| TYPE | DESCRIPTION |
| Mfr | Inventchip Technology |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 575pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 28A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
