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  • image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4990(TE85L,F)
Model RN4990(TE85L,F)
Product Category Bipolar Transistor Arrays, Pre-Biased
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description NPN + PNP BRT Q
Encapsulation -
Package Tape & Reel (TR)
RoHS Status
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$0.2300

$2.3000

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$12.0000

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$0.0900

$45.0000

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$0.0700

$70.0000

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$180.0000

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image of Bipolar Transistor Arrays, Pre-Biased>11478764
11478764
Model
11478764
Product Category
Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
NPN + PNP BRT Q
Encapsulation
-
Package
Tape & Reel (TR)
lang_roHSStatusStatus
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max200mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)4.7kOhms
Supplier Device PackageUS6
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