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Shenzhen Fuchao Technology
| Model： | SIJA54ADP-T1-GE3 |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Vishay / Siliconix |
| Description： | N-CHANNEL 40 V |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$1.8600
$1.8600
10
$1.5400
$15.4000
100
$1.2300
$123.0000
500
$1.0400
$520.0000
1000
$0.8800
$880.0000
3000
$0.8400
$2,520.0000
6000
$0.8100
$4,860.0000
9000
$0.7800
$7,020.0000
| TYPE | DESCRIPTION |
| Mfr | Vishay / Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.4A (Ta), 126A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 15A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 65.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 20 V |
