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Shenzhen Fuchao Technology
| Model： | TP65H070LSG |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Transphorm |
| Description： | GANFET N-CH 650 |
| Encapsulation： | - |
| Package： | Tube |
| RoHS Status： | |
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| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | TP65H070L |
| Package | Tube |
| Product Status | DISCONTINUED |
| Package / Case | 3-PowerDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Supplier Device Package | 3-PQFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
